advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v fast switching speed r ds(on) 4.4 simple drive requirement i d 2.5a rohs compliant description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value units rthj-c maximum thermal resistance, junction-case 2.3 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice rating 700 rohs-compliant product -55 to 150 ap03n70h/j-h 2.5 1.6 storage temperature range 8 54.3 linear derating factor 0.44 200812114 parameter 2.5 parameter -55 to 150 31 1 + 30 g d s g d s to-252(h) g d s to-251(j) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for ac/dc converters. the through-hole version (ap03n70j) is available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 700 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.6 - v/ : r ds(on) static drain-source on-resistance 3 v gs =10v, i d =1.6a - - 4.4 ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap03n70h/j-h 0.0 1.0 2.0 3.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =2.5a v g =10v 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 4 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c v g =4.0v 10v 6.0v 5.0v 4.5v 0 1 1 2 2 3 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.5v 10v 5.0v 4.5v 4.0v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 ap03n70h/j-h 0 4 8 12 16 0 5 10 15 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =480v 1 100 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c s in g le puls e 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty=0.5 single pulse
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